| 摘要 |
PURPOSE:To contrive the improvement in the characteristics of the formed films, a film forming velocity, and reproductivity and the uniformity of quality of the films by introducing a germanium compound and the active seed which is produced by decomposition of a compound including silicon and halogen and carries out a chemically mutual action with the germanium compound into a film forming space separately and irradiating those with a light energy to excite the germanium compound and to cause a reaction. CONSTITUTION:When an intermediate layer 12 is formed, even the formation of a photosensitive layer 13 is effected continuously. In this case, as the materials of the intermediate germanium compound in gas state, and if neces sary, a silicon compound, hydrogen, a halogen, compound, an inert gas, a carbon compound, a gas of a compound including impurity elements as a component and etc. are introduced separately into a film forming space where a base 11 is arranged. Then by using a light energy, the intermediate layer 12 is formed on the base 11. The compound including silicon and halogen which is introduced into decomposition space and produces an active seed when forming the interme diate layer 12 produces an active seed such as SiF2* for example, easily at high temperature. |
