发明名称 |
Method for making vertical MOSFET with reduced bipolar effects |
摘要 |
A vertical MOSFET device includes a semiconductor wafer having source, body and drain regions of alternate conductivity type disposed therein. The source and drain regions are located so as to define the length and width of a channel region in the body region at a surface of the wafer. The body region further includes a similar conductivity type supplementary region having a relatively high areal dopant concentration. The supplementary region, which can be fabricated by ion implantation, extends laterally beneath a portion of the channel region. A source electrode is disposed on one wafer surface and a drain electrode is disposed on an opposing wafer surface.
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申请公布号 |
US4587713(A) |
申请公布日期 |
1986.05.13 |
申请号 |
US19840582601 |
申请日期 |
1984.02.22 |
申请人 |
RCA CORPORATION |
发明人 |
GOODMAN, LAWRENCE A.;GOODMAN, ALVIN M. |
分类号 |
H01L21/336;H01L29/10;H01L29/41;H01L29/417;H01L29/423;H01L29/78;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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