| 摘要 |
PURPOSE:To enable low-temperature and short-time activation and shallow- junction formation by combining Si ion (S<+>) implantation with lamp annealing. CONSTITUTION:An SiO2 film is formed by 1,000Angstrom oxidation of the wafer surface of an N type Si substrate (3-6OMEGAcm), and a continuous amorphous region is formed on the Si substrate by multistep implantation of Si ion (Si<+>) through this oxide film on the basis of Formula (1). Next, boron ions (B<+>) are implanted to this amorphous region under conditions of implantation: 40keV, 3X10<15> ions/cm<2>; further, 10sec lamp annealing is carried out at a temperature range of 600-800 deg.C. Then, the boron ions (B<+>) are sufficiently activated, resulting in the formation of a shallow P<+> junction layer of approx. 0.1mum thickness. |
