| 摘要 |
<p>PURPOSE:To maintain preferable performance for a long period and to reduce the irregular characteristic between sensor units by continuously varying the refractive index partly with respect to the thicknesswise direction in the photoconductive layers of the sensor units and setting the refractive index near the surface of the substrate to the special value. CONSTITUTION:The photoconductive layer of the sensor unit is continuously varied in the thicknesswise direction for the refractive index at least part and the refractive index near the surface of the substrate of the photoconductive layer is 3.2 by the light of the wavelength of 6,328Angstrom . This photoconductive layer can be formed by suitably setting the conditions in case of glow discharge by a plasma CVD method, a reactive sputtering method or ion implanting method such as discharge power, substrate temperature, raw material gas composition, raw material gas. A boundary between an a-Si lower layer 2 and an a-Si layer 3 is formed to have properties in the intermediate of both the layers continuously variable in the refractive index. The substrate 1 is glass or ceramic or other material.</p> |
