发明名称 Method of using polysilane positive photoresist materials
摘要 New polysilane copolymers comprise recurring units of -Si(X)(Y)- and Si(A)(B)-, Si(X)(Y) being different from Si(A)(B), wherein X and Y together have 1-13 carbon atoms, and X and Y each independently is hydrogen, alkyl, cycloalkyl, phenyl, alkylphenyl, or phenylalkyl, with the proviso that only one of X and Y contains a phenyl moiety, or together X and Y are an alkylene group forming a ring with the adjoining Si atom, and wherein A and B together have 3-13 carbon atoms, and A and B each independently is alkyl or cycloalkyl, with the proviso (a) that when one of A and B is ethyl, the other is not methyl or ethyl, and (b) that when one of A ad B is n-propyl and the other is methyl, X and Y are not both methyl. Corresponding homopolysilanes are also provided. Upon ultraviolet irradiation, they photodepolymerize to form volatile products. As a result, they represent a new class of photoresists which enable direct formation of a positive image eliminating the heretofore required development step.
申请公布号 US4587205(A) 申请公布日期 1986.05.06
申请号 US19840676148 申请日期 1984.11.29
申请人 THE UNITED STATES OF AMERICA AS REPRESENTED BY THE UNITED STATES DEPARTMENT OF ENERGY 发明人 HARRAH, LARRY A.;ZEIGLER, JOHN M.
分类号 C08G77/60;G03F7/075;(IPC1-7):G03C5/00 主分类号 C08G77/60
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