| 摘要 |
PURPOSE:To form resist cross-sectional shapes to form fine patterns, by a method wherein a resist is successively irradiated with many kinds of ion beams with different flight ranges in resist. CONSTITUTION:A PMMA resist 2 applied on a substrate 1 is irradiated with Be<++> ion beams 3a at the part where a pattern is to be formed. This makes the resist 2 partly exposed, and a photo-sensitive region 4a is formed. Next, a photo-sensitive region 4b is obtained by irradiation with an Si<++> ion beam 3b with a shorter range than that of Be<++> ion beams over a wider region than that by Be<++> irradiation. Si does not reach the lower layer of the resist 2, because of a shorter range in the resist 2, and the resist becomes exposed to light only to halfway; therefore, the two photo-sensitive regions 4a and 4b are formed. Next, on mixed development of MIBK with IPA, a resist cross-section 5 is formed. |
