Method of growing gallium arsenide crystals using boron oxide encapsulant

摘要

Gallium arsenide single crystals are grown under an encapsulant of boron oxide which contains a predetermined amount of water in the range of 200 to 1000 ppm. The GaAs crystals so produced are stable in that the resistivity of the GaAs upon heat treatment remains substantially constant. The GaAs single crystals as produced may be subjected to a bulk anneal to further improve the stability.