| 摘要 |
PURPOSE:To enable the inactivation of surface of a compound semiconductor including Sb by forming a layer of phosphorus or of a compound including phosphorus on a clean surface of the compound semiconductor including Sb and forming an insulating layer on that layer. CONSTITUTION:A GaSb semiconductor 1 subjected to chemical etching is inserted into an extra high vacuum device and the surface is cleaned with being irradiated with Sb molecular beams while being heated. After that, in stead of the Sb molecular beam, P molecular beam is projected together with Ga molecular beam simultaneously and a GaP compound layer 2 (a layer of phosphorus or a compound including phosphorus) is formed on a GaSb clean surface. After that, a GaS semiconductor comprising a GaP compound layer is flowed out into the atmosphere and an SiO2 insulating film 3 is laminated on said semiconductor. The GaSb semiconductor comprising a surface inert film thus formed comprises P on its boundary and there is no deposition of metal Sb can been seen. |
