Single crystal of compound semiconductor of groups III-V with low dislocation density

摘要

More than two isoelectronic impurities are doped in a host crystal of compound semiconductors of groups III-V. An impurity atom forms a covalent bond with a host atom. Although the real bond length "A" between an impurity and a host atom in the crystal cannot be measured, it can be surmised from the bond length "a" between two atoms in a pure two-component crystal consisting of the elements same with the impurity atom and the host atom. The bond length between host atoms in the crystal is called standard bond length "a0". Definite and measurable bond length "a" replaces the real unknown bond length "A". The impurity whose replaced bond length "a1" is shorter than "a0" is called an under-impurity. The impurity whose replaced bond length "a2" is longer than "a0" is called an over-impurity. In this invention at least one under-impurity and at least one over-impurity are doped in the host single crystal. From the concentrations "x1" and "x2", and the replaced bond lengths "a1" and "a2" of the isoelectronic under- and over-impurities, an arithmetic average " &upbar& a" of the bond lengths is calculated. This invention requires that the total concentrations of the isoelectronic impurities should be larger than 1018 atoms/cm3 and the difference between " &upbar& a" and "a0" should be less than plus or minus 2%. Size effects of under- and over-impurities compensate each other in the double-impurity-doped crystal.