METHOD OF AND DEVICE FOR EPITAXIALLY PROVIDING A LAYER OF A SEMICONDUCTOR MATERIAL ON ONE, SUBSTANTIALLY FLAT SIDE OF A SINGLE CRYSTAL SUBSTRATE AND ARTICLE, IN PARTICULAR SEMICONDUCTOR DEVICE, MANUFACTURED BY USING SAID METHOD,申请号CAD888444-传众专利搜索

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发明名称	METHOD OF AND DEVICE FOR EPITAXIALLY PROVIDING A LAYER OF A SEMICONDUCTOR MATERIAL ON ONE, SUBSTANTIALLY FLAT SIDE OF A SINGLE CRYSTAL SUBSTRATE AND ARTICLE, IN PARTICULAR SEMICONDUCTOR DEVICE, MANUFACTURED BY USING SAID METHOD
摘要
申请公布号	CA888444(A)	申请公布日期	1971.12.14
申请号	CAD888444	申请日期
申请人	N.V. PHILIPS GLOEILAMPENFABRIEKEN	发明人	ELIE ANDRE
分类号		主分类号
代理机构		代理人
主权项
地址

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