| 摘要 |
PURPOSE:To improve the accuracy in matching of a mask pattern and a wafer pattern by a method wherein a multiplying factor error detecting means and a magnifying factor correcting means are added to a projecting and exposing device. CONSTITUTION:Measuring means 3a and 3b measure the amount of deviation (DELTAx>=a and DELTAya) and (DELTAxb and DELTAyb). An arithmetic operation means 8 calculates the correction driving amount of a wafer stage 4 of DELTAX=(DELTAxa+DELTAxb)/2, DELTAY=(DELTAya +DELTAyb)/2, DELTAtheta=tan<-1> {DELTAyb-DELTAya)/L}, and it calculates also the multiplying factor correcting amount of DELTAm={DELTAxb-DELTAxa)/L. Besides, the arithmetic operational means 8 calculates the pneumatic interval correcting amount DELTAZ=f(DELTAm) corre sponding to m. Based on the calculated wafer stage correction driving amount and the pneumatic interval correcting amount, a stage 4 and an electrostrictive element spacer 7 are driven, and positioning and multiplying factor collecting operations are completed. Then, a shutter is opened, and the mask pattern is transferred to a wafer 2. |
