A bipolar hetero-junction transistor and method of producing the same.

摘要

The bipolar hetero-junction transistor according to the present invention has a layer forming the emitter substantially consisting of doped and hydrogenated semiconductor material at least partly in amorphous form. A high current gain ( beta ) is obtained because a wide bandgap in the emitter material. Preferably the layer forming the emitter consists of microcrystalline silicon doped and hydrogenated, which renders a small base resistance being preferable for high frequency purposes. The amorphous bipolar hetero-junction transistor can be produced by CVD-technique, by using a plasma or by photodissociation. The transistor having a microcrystalline emitter layer can be produced by one of said methods by heating an amorphous emitter layer.