Process for preparing amorphous silicon semiconductor

摘要

Preparation of an amorphous silicon semiconductor by glow discharge decomposition in an atmosphere containing a silicon compound in a glow discharge decomposition chamber which has a radio frequency electric field and a magnetic field crossing the electric field at right angles and in which the substrate is arranged substantially at right angles to the electric field. The amorphous silicon thin layer has excellent characteristics, particularly an excellent photoconductivity, can be prepared at a high rate of film formation, and also an amorphous semiconductor PIN homo- or hetero-junction photovoltaic device prepared according to the process of the invention has excellent characteristics.