发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To easily flatten the surface by a method wherein a wider groove is reduced to a width approximately the same as that of another narrower groove by previously forming a conductive layer inside, and narrower grooves and this groove are filled with conductive layers at the same time is a later process. CONSTITUTION:A conductive layer 41 of low resistivity is deposited to a thickness whereby grooves 25A and 25B are fully filled, and the whole surface is coated with photo resist, thus leaving a photo resist layer 42 only in the wider groove 25B. At this time, the thickness of grooves 25C and 25D, produced by etching the conductive layer 41 with the mask of the photo resist layer 42, which are surrounded by an insulation layer and the conductive layer 41 are made so as to become wider than the degree that a conductive layer 27 can be fully deposited in the grooves and like the groove 25B narrower than the degree that the sample plane can be flattened by a viscous material layer 32. After the conductive layer 41 is removed with an etchant, the photo resist layer 42 is removed. Then, the conductive layer 27 of low resistivity is deposited to a thickness whereby the grooves 25A, 25C, and 25D are fully filled. This manner enables a groove of arbitrary width to be flatly filled with a conductive layer by replacing a groove with a narrower groove.
申请公布号 JPS6171673(A) 申请公布日期 1986.04.12
申请号 JP19840192711 申请日期 1984.09.17
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 HASHIMOTO CHISATO;SAITO KAZUYUKI
分类号 H01L21/336;H01L29/78;(IPC1-7):H01L29/78 主分类号 H01L21/336
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