| 摘要 |
PURPOSE:To enable correct ion implantation by selecting a light injected from ion and atom by a spectroscope to convert into electric signal and by adjusting the amount of ion implanted into a semiconductor crystal plate and the amount of atom. CONSTITUTION:Spectral rays of atom and ion of arsenic from a light source 29 are passed on the surface of a silicon crystal 16 in an ion chamber 14 to absorb atom and ion of arsenic, and they are put in a spectrophotometer 31 to obtain electric signals 33, 35 corresponding to strength of respective light, and input to a signal processing device 38. And the amount of atom and ion of arsenic is obtained and signals are transmitted to a throttle 41 and a vacuum valve 21 of an ion separating device 13 at the time of increase of the amount of atom, and at the time of decrease of the amount of ion, the throttle and the valve are controlled to increase output of a magnetron. Then, arsenic ion and atom implanted into the silicon crystal 16 are directly measured to enable correct implantation. |
