发明名称 HIGH-FREQUENCY SEMICONDUCTOR ELEMENT
摘要 PURPOSE:To lessen adverse effects of the electrode-earth source inductance of the titled element and its parasitic capacitance on high frequency characteristics, and further to enhance the effect of dissipating heat generating in the operating layer, by a method wherein the PSB structure and the via-hole structure are both used in this element. CONSTITUTION:Prescribed voltages are impressed each on source 2, gate 3, and drain 4 electrodes formed on said element 1. A parasitic capacitance 7 generates between the source electrode 2 and the earth 10, but the parasitic capacitance value reduce because of via-hole 41 structure. At the point of voltage impressing, heat generates in an operating layer 6 and passes through the element thermal resistor 9 of this element 1. At that time, however, the material beginning to leak out of a PSB plating metal 5 is inserted into a via-hole 41, and so the heat of the operating layer 6 is transmitted toward via-holes of smaller thermal resistance, leading to the improvement of heat dissipating effect as the high-frequency element 1.
申请公布号 JPS6165479(A) 申请公布日期 1986.04.04
申请号 JP19840188409 申请日期 1984.09.07
申请人 MITSUBISHI ELECTRIC CORP 发明人 OHASHI MITSUO
分类号 H01L29/812;H01L21/338;H01L23/66;H01L29/41;H01L29/417 主分类号 H01L29/812
代理机构 代理人
主权项
地址