| 摘要 |
PURPOSE:To produce image pick-up element transmitting no false image by a method wherein, when phototransistors with the same structure to be solid image pick-up elements separated by insulating films are provided on one semiconductor substrate, an overflow drain region to drain surplus charge flowing from transistors is provided on upper end of respective base region. CONSTITUTION:Phototransistors with the same structure to be solid image pick-up elements separated by insulating films 4 are provided on an N type Si substrate 6 as mentioned blow. In other words, referring to one transistor only with the same structure as that of the other transistors, firstly an N type emitter region 30 encircled by the insulating films 4 is provided on the P type Si substrate 6 and then P type base region 20 is diffusion-formed in the region 30 further providing an N type collector region 10 in the base region 20. At this time, an overflow drain region 40 is simultaneously diffusion-formed on the edge of region 20 to be placed by the side of region 10 with an emitter electrode 3' mounted on the region 40. Likewise the emitter electrode 3' and a collector electrode B1 are respectively mounted on the regions 30 and 10. |
