| 摘要 |
Disclosed herein is a selective epitaxial growth method for forming an opening, utilizing anisotropic dry etching, in a silicon oxide film formed on a silicon substrate and epitaxially growing a silicon layer selectively in the opening. The anisotropic dry etching is performed employing a mixed gas of carbon tetrafluoride and hydrogen, and the wall surface of the opening is perpendicular to the major surface of the silicon substrate. The epitaxial growth is achieved under a temperature of 900 DEG to 1100 DEG C. utilizing a mixed gas of a low pressure under 100 Torr. containing dichlorosilane as a silicon source and hydrogen as a carrier gas. A silicon layer thus obtained contains substantially no lattice defects such as a stacked fault.
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