| 摘要 |
PURPOSE:To provide a semiconductor element with different and separate resistance wiring portions by a method wherein a high-melting metal having a low resistance value is deposited selectively on a polycrystalline silicon film and a high-resistance wiring portion formed on the polycrystalline silicon film and a low-resistance wiring portion formed of the high-melting metal on the polycrystalline silicon film are patterned inside the same wiring layer. CONSTITUTION:An insulating film 2 is formed on a semiconductor substrate 1, a polycrystalline silicon film 3 is formed thereon by means of chemical vapor- phase growth, and impurities are diffused therein so that a high-resistance wiring portion may have a desired a resistance value. Thereafter a silicon oxide film or a silicon nitride film 4 is formed by means of chemical vapor- phase growth. This silicon oxide film or the silicon nitride film 4 is patterned by a resist so that the portion in which the resistance of a wiring is increased may be left. Next, a high-melting metal 5 is deposited selectively only on the polycrystalline silicon film 3, and the silicon oxide film or the silicon nitride film 4 is removed by a fluoric acid or a phosphoric acid. Then, patterning being executed by using a resist 6, a high-resistance wiring portion R12 and a low-resistance wiring portion R11 are formed within the same wiring layer. |
