发明名称 PHOTOTRIGGER OPTICAL QUENCHING GATE TURN-OFF THYRISTOR
摘要 PURPOSE:To improve the noise resistance and to reduce the number of parts by biasing the gate of a gate turn-off thyristor (GTO) through a photosensitive element with a positive voltage, and emitting a trigger light pulse to the element. CONSTITUTION:The anode A2 of a GTO1 is biased through a load resistor 11 to VAK'12, and a photosensitive element 5 and a photosensitive element 6 for quenching a light are connected with the gate G4. The elements 5, 6 increase the conductivity by emitting a light, and are connected with positive and negative power sources Vt7, Vg8. Thus, when a trigger pulse LT9 is emitted to the element 5, it becomes low resistance state, the gate G4 is positively biased to turn the GTO1 ON. When a quenching light pulse LQ10 is emitted to the element 6 with the GTO1 being ON state, holes are removed from the gate G4 to turn the GTO1 OFF.
申请公布号 JPS6154870(A) 申请公布日期 1986.03.19
申请号 JP19840175733 申请日期 1984.08.22
申请人 SEMICONDUCTOR RES FOUND 发明人 NISHIZAWA JUNICHI;TAMAMUSHI NAOSHIGE;NONAKA KENICHI
分类号 H02M1/06;H02M1/08;(IPC1-7):H02M1/08 主分类号 H02M1/06
代理机构 代理人
主权项
地址