,申请号JP19840127494U-传众专利搜索

首页产品黄页商标征信

会员服务注册登录

法人/股东/高管

发明名称
摘要
申请公布号	JPS6142237(U)	申请公布日期	1986.03.18
申请号	JP19840127494U	申请日期	1984.08.24
申请人		发明人
分类号	B23Q7/00;B23K37/04;B23K37/047;(IPC1-7):B23Q7/00	主分类号	B23Q7/00
代理机构		代理人
主权项
地址

您可能感兴趣的专利

Semiconductor light-emitting element

P-N diode having a controlled heterostructure self-positioned on HgCdTe, for infrared imagers

Transistor device with improved source/drain junction architecture and methods of making such a device

Non-planar transistors with replacement fins and methods of forming the same

Thin film transistor and display panel employing the same

Binary CMOS image sensors, methods of operating same, and image processing systems including same

Isolation for semiconductor devices

Lateral light shield in backside illuminated imaging sensors

Solid-state imaging device and electronic instrument

Semiconductor device

Three-dimensional high surface area electrodes

Semiconductor constructions

Annealing oxide gate dielectric layers for replacement metal gate field effect transistors

Integrated circuits separated by through-wafer trench isolation

Degassing apparatus adapted to process substrates in multiple tiers with second actuator

Coating slit apparatus for coating a substrate and method for coating using the same

Power bar design for lead frame-based packages

Die assembly on thin dielectric sheet

Integrated circuits with metal-insulator-semiconductor (MIS) contact structures and methods for fabricating same

Optically tuned hardmask for multi-patterning applications