| 摘要 |
PURPOSE:To stabilize the characteristics of a semiconductor device and to improve the coefficient of effective utilization of the emitter area, by forming a semiconductor layer within an aperture, forming an emitter layer connected with the semiconductor layer, forming a base electrode connected with a refractory metal layer and forming a collector electrode in the semiconductor layer. CONSTITUTION:The surface layer of a P type Si substrate 5 is provided with an N type well 6 as an element forming region, in which a low concentration N type region 7 is grown. A field insulation layer 8 is formed. The concentration of the N type impurity in a collector electrode contact region 9 is increased by means of the photo lithography and the ion implantation. The surface of the substrate is oxidized to form an insulator layer 12 consisting of Si dioxide. An aperture 13 is then filled with a low concentration N type Si single-crystal layer 14 by means of the selective epitaxial growth. Ions of an N type impurity are implanted in the surface layer of the crystal 14 to a high concentration, so as to form an emitter electrode contact region 18. After that, the base electrode forming region and the collector electrode forming region are provided with an aperture for contacting the electrodes. Thus, an emitter electrode 15, a base electrode 16 and a collector electrode 17 are obtained. |
