发明名称 |
Photocorrosion resistant semiconductor photoelectrodes |
摘要 |
A semiconductor photoelectrode resistant to photocorrosion and a method of preparing such a photoelectrode are disclosed. The photoelectrode includes a doped oxide layer on which illumination falls for photo-stimulation. The oxide layer is doped with metallic ions, such as tantalum ions, to suppress photocorrosion. In one oxide doping method, tantalum pentachloride vapor generated by sublimation is directed against a silicon dioxide layer on a heated photoelectrode.
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申请公布号 |
US4574039(A) |
申请公布日期 |
1986.03.04 |
申请号 |
US19840653415 |
申请日期 |
1984.09.24 |
申请人 |
THE STANDARD OIL COMPANY (OHIO) |
发明人 |
PYKE, STEPHEN C.;BRUCE, MARK R. |
分类号 |
H01M4/00;(IPC1-7):C25B11/04 |
主分类号 |
H01M4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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