| 摘要 |
PURPOSE:To shorten time for transffering of charge form charge input to transfer channel by protecting signal charge from remaining and decreasing deformation of the output power. CONSTITUTION:In dual chanenel type CCD, P<-> diffusion area 60 of low density is extended to an area under an electrode 4 for distributing signal charge to two transfer ways 5, 5' by MOS construction. The operation of CCD in this construction is same as conventional type. A signal charge sampled under an adjacent electrode 3 of same construction passes under the electrode 4 upon transfering to first electrodes 6a, 8b of the transfer way. However, the underside of the electrode 4 is separated to surface channel area and buried channel area and consequently the surface channel of low moving degree is preactically shortened. Accordingly, the time for passing of signal charge under the electrode 4 is shortened and CCD having higher ability can be realized. |
