| 摘要 |
PURPOSE:To decrease the temp. and damage of a process and to satisfy the high productivity, by providing a means in which large quantities excited species are generated by equilibrium or semiequilibrium plasma and introduced onto a substrate, and brought to react with another introduced gas to form thin film. CONSTITUTION:A reaction gases B and A are allowed to flow into a reaction chamber 9 from introducing systems for gases B and A respectively. If a source 5 is turned on to impress RF to a coil 4, an arc plasma 19 is generated under a plasma generating source 1. In the plasma 19, there are ion, electron, neutral gas molecule, excited gas molecule, atom mixedly and thermally in equilibrium or semiequilibrium state. Metastable molecule or atom having long life time in the plasma 19 are introduced together with neutral gas above a substrate 18 from an orifice 7 through a distributing plate 16. On the other hand, the gas B is introduced above a substrate 18, through a distributing tube 14, and thin film is formed on the substrate 18 by the reaction between both gases. |
