| 摘要 |
PURPOSE:To obtain a two-dimentional strain sensor which two-dimentionally can detect the distribution of strain aimed pressure, the providing, on a flexible substrate, a structure in which an amorphous silicon thin film is interposed between upper and lower electrode sets each consisting of a plurality of parallel linear electrode plates and intersecting each other at right angles. CONSTITUTION:A two-dimentional strain sensor is obtained by applying a voltage to selected electrode plates of upper and lower electrode sets 2 and 3. For example, a voltage is applied between a lower linear electrode Dj and each of the upper electrodes U1, U2,...Um, and the current flowing therethrough is measured to determine respective resistances R1j, R2j,... between the electrode Dj and the upper electrodes U1, U2,...Um. Then, a voltage is applied between another lower electrode and each of the upper electrodes. In this manner, the resistance Rij in every matrix element can be known through (mXn) times of operation. Since the resistance without strain is already known, the degree of strain can be determined from the difference between these resistances. |
