HIGH-SPEED SPUTTERING DEVICE

摘要

PURPOSE:To increase the number of sputtering and to increase a sputtering speed in film formation, etching, etc. by generating a perpendicular magnetic field near the surface of a target in a sputtering device. CONSTITUTION:A substrate base 16 provided with a cooling pipe 17 is attached in a vacuum vessel 11 and the substrates 15 to be subjected to the sputtering treatment are set on both surfaces thereof. A target 12 is disposed to face the substrates 15 and the magnetic field domain, constituted with a permanent magnet 13 consisting of a rare earth magnet such as SmCO<5> and a yoke 14 and having >=9,000 gauss residual magnetic flux density is disposed on the rear thereof to form the powerful magnetic field. A high-frequency voltage is impressed at the same instant between the target 12 and the base 16 from a high-frequency power source 18 and the generated plasma is increased in density by the above- mentioned magnetic field. The surface of the target 12 is sputtered by the powerful ions generated there. The film formation at a high film deposition rate and the uniform etching at a high speed are made possible.