| 摘要 |
The method in accordance with the invention is used for the production of field-effect transistors and preferably implemented in such a manner that a thin aluminum layer (2) is deposited on the surface of a silicon substrate (1), for example, by means of a basic cleaning solution containing aluminum, that subsequently thermal oxidation is effected, during which, in addition to a silicon dioxide layer (3), an about 1 to 1.5 nm thick layer (4) containing aluminum oxide and silicon dioxide is formed and that finally, if required, at least one further layer, for example, an Si3N4 (5) or an Si3N4 (5) and an SiO2 layer are deposited. By adding about 400 ppb aluminum to the cleaning solution, which in the finished structure equals a quantity of aluminum of about 250 pg/cm2 layer surface, the threshold voltage VS is raised by about 470 millivolts. The structure produced in accordance with the invention is used in particular in N-channel field-effect transistors of the enrichment type which in series connection are integrated in great number and at high density on semiconductor substrates.
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