| 摘要 |
PURPOSE:To form an electrically inactive and disordered semiconductor structure region in a superlattice, by subjecting a III-V group superlattice to ion implantation of either a III-group atom or a III-group atom which can substitute for the III-group atom in the superlattice so as to obtain lattice alignment, and annealing the sample. CONSTITUTION:Six GaAs layers 2 and six AlGaAs layers 3 are alternately grown on an n type GaAs substrate 1 by molecular beam epitaxy. A part of the crystal is covered with a photoresist mask 4, and Al ions 5 are implanted. After the mask 4 has been removed, the sample is annealed under As pressure to obtain a crystal having the illustrated cross-section. The intensity of a signal of Al ions in a region in which no Al ions 5 are implanted periodically changes in the depthwise direction, whereas the curve 9 which represents a region in which Al ions are implanted shows no periodical structure, and the GaAs/GaAlAs superlattice disappears. Thus, an electrically inactive and disordered region is formed in a superlattice, whereby it is possible to eliminate element designing restrictions. |
