| 摘要 |
PURPOSE:To leave a field insulating film having a sufficient film thickness and to obtain the good contact of an interconnection with an S/D region layer regarding the manufacturing method, of a semiconductor device, wherein a contact hole with the S/D region layer is formed so as to be extended to the field insulating film for element isolation use. CONSTITUTION:The manufacture is constituted by including a process wherein, after insulating films 26a, 26b have been formed on the surface of a semiconductor substrate 23 in adjacent element formation regions 22a, 22b so as to sandwich a field insulating film 24, a first conductor film 27 and a buffer insulating film 28 are formed sequentially on the insulating films 26a, 26b, a process wherein the buffer insulating film 28, the first conductor film 27 and the insulating films 26a, 26b are etched and removed sequentially and an opening part is formed in the field insulating film 24 and in the semiconductor substrate 23 adjacent to the field insulating film 24, a process wherein a vapor etching operation is performed so as to expose the semiconductor substrate 23 and the first conductor film 27 and a process wherein a second conductor film 32 is formed so as to be connected to the semiconductor substrate 23 and the first conductor film 27.
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