| 摘要 |
PURPOSE:To shorten a manufacturing process by implanting Si ions to both or one metallic film of substrate regions forming p and n channel FETs through an ion beam mixing method. CONSTITUTION:An n-GaAs substrate 12 and a p-GaAs substrate 13 are formed onto a semi-insulating GaAs substrate 11. Gate electrodes 15 and 18 are shaped in predetermined regions in the substrate 12 and the substrate 13 by evaporating W silicide. Pt is evaporated simultaneously onto the substrate 12 and the substrate 13 through the patterning of a mask to each form source electrodes 14, 17 and drain electrodes 16, 19. Si ion beams are mixed with the electrode 14 and the electrode 16 shaped onto the substrate 12 as shown in the arrow. The ion beam mixing method particularly requires no mask. Ohmic layers 20 having low resistance in which Pt and Si are alloyed are formed through heat treatment. According to the method, the source and drain electrodes can be shaped simultaneously by the same material, thus shortening a manufacturing process. |
