| 摘要 |
PURPOSE:To eliminate degradation of contact characteristics by a method wherein a metal silicide film, composed of an upper layer of tungsten silicide and lower layer of platinum silicide or palladium silicide, is formed to cover a region including a gate electrode, source, and drain. CONSTITUTION:A gate oxide film 3 and gate electrode 4 are built, platinum or palladium 7 is deposited on a silicon substrate 1 wherein half-finished source/ drain region 6 are positioned. A tungsten layer 8 is further deposited. Heat treatment is accomplished in an inert gas at temperatures 400-1,000 deg.C for the completion of regular source/drain regions 6. During this process, the platinum or palladium layer 7 and tungsten layer 8 react with silicon contained in the source/drain regions 6 for the formation of a metal silicide film 9. A process follows wherein the metals remaining deposited without participating in the reaction during the heat treatment are removed, an intermediary insulating film 10 is formed, a contact hole 11 is provided, and an Al wiring 12 is built. The tungsten silicide does not combine with the Al to form a three-element compound even when exposed to high temperatures in a process to follow the formation of the Al wiring 12. |
