| 摘要 |
PURPOSE:To enable to obtain an insulating film of uniform thickness by performing a rotary coating by a method wherein an insulating material is rotary coated on the intersecting point of the groove for chip cutting located on a wafer in the state wherein an oxide film or a metal film for wiring is left. CONSTITUTION:An insulating material is rotary coated on the intersecting point of the groove 3 for cutting of a chip 2 of a wafer 1 in the state wherein an oxide film 14 or a metal film for wiring is left. For example, when an organic material for an interlayer insulating film or a surface protecting film is rotary coated on the wafer 1 whereon an SiO2 film 14 is left at the intersecting point of the groove 3 to be used for chip cutting, the flowing of the organic material passing through the grooves 3 and 3 in the direction of rotating radius vector can be prevented, because there is the obstruction in an SiO2 film 14 at the intersecting part of the grooves 3 and 3. Accordingly, the organic material can be coated in uniform thickness. |
