Static field-induced semiconductor structures.

摘要

A disordered multiple layer semiconductor structure including a field-inducing layer bending the energy bands of and generating an electric field in a contiguous layer of semiconductor material. Semiconductor devices incorporating the invention have improved performance resulting from increased drift length of charge carriers and increased stability. The bent energy bands and induced electric field assist the movement of charge carriers through the multiple layer semiconductor structure, improving electrical conductivity in a direction transverse to the layers.