| 摘要 |
<p>A power JFET (2) has a common drift region (4) between split first and second longitudinally separated sets of rows (6, 8) of alternating conductivity type layers (10-20 and 21-31) forming a plurality of channels (11, 13, 15, 17, 19,22,24,26, 28 and 30). The JFET has an ON state conducting bidirectional current horizontally longitudinally through the common drift region and the channels. The JFET has an OFF state blocking current flow through the channels due to horizontally lateral depletion pinch-off. The layers of the rows extend vertically and horizontally longitudinally such that the direction of layering extends horizontally laterally. Particular gate structure is disclosed.</p> |
