发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT CAPACITOR |
摘要 |
<p>SEMICONDUCTOR INTEGRATED CIRCUIT CAPACITOR Polyoxide capacitors for semiconductor integrated circuits having oxide dielectric films of 500 Angstroms or less are fabricated using in-situ doped polysilicon layers to have electrical field breakdowns of from 6 to 9 MV/cm. The first polysilicon layer is formed by LPCVD using silane and phosphene at a temperature in the range from about 570 degrees C to 595 degrees C. These capacitors are relatively precisely valued devices used particularly in applications such as filter/codecs. However, they are useful wherever integral capacitors are needed having high dielectric strength polyoxides, including such semiconductor integrated circuit devices as EPROMs and dynamic RAMs.</p> |
申请公布号 |
CA1199423(A) |
申请公布日期 |
1986.01.14 |
申请号 |
CA19830427894 |
申请日期 |
1983.05.11 |
申请人 |
WESTERN ELECTRIC COMPANY, INCORPORATED |
发明人 |
ALSPECTOR, JOSHUA;KINSBRON, ELIEZER;STERNHEIM, MAREK A. |
分类号 |
H01L27/04;H01L21/02;H01L21/20;H01L21/822;H01L21/8234;H01L27/08;H01L27/088;H01L29/78;(IPC1-7):H01L21/70 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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