| 摘要 |
PURPOSE:To obtain a solid-state image pickup element having a large numerical aperture by utilizing a Schottky junction electrode formed onto a region, in which charges are stored and transferred, as an electrode for a CCD and enabling optical detection and the transfer of charges. CONSTITUTION:When electrodes 181-184 having Schottky junctions and gate electrodes 171-174 are biassed at the same voltage, potential to holes in a P type region 162 in the lower sections of the electrodes 171-174 is made lower than that in the lower sections of the electrodes 181-184. When infrared rays are projected under the state in which potential in the region 162 under the electrodes 182, 184 is biassed so as to be made lower than potential in the region 162 under the electrodes 171, 173, electron-hole pairs are generated in the electrodes 181-184. Holes having energy exceeding the barriers of Schottky junctions among the electron-hole pairs are injected to the region 162. When driving pulses deflected to negative number from 0V, phase thereof is displaced at 180 deg., are each transmitted over conductors phiA1, phiA2, optical signal charges collected to sections except the electrodes 172, 174 are transferred in the right direction. According to the constitution, an image pickup element having a large numerical aperture is obtained. |
