THREE-DIMENSIONAL SEMICONDUCTOR DEVICE

摘要

: A three-dimensional semiconductor device is constructed in which MOS transistors are arranged, not only in the direction of the substrate surface, but also in a direction perpendicular thereto. At least one layer of insulator film and of single-crystal film are stacked alternately and deposited on a surface of a semiconductor substrate. An impurity-doped region formed in each semiconductor film is used as a gate, source or drain of a MOS transistor. The arrangement provides a device that has a higher integration density than heretofore available.