| 摘要 |
PURPOSE:To obtain a YIG high frequency device with small size and high mass- productivity by constituting a YIG resonance section and a conductor pattern on an insulating substrate with the integrated circuit manufacture technology. CONSTITUTION:Ion beam etching is applied to a single crystal layer formed on the insulating substrate and after the resonator 3a and a couple of magnet ports 3b, 3c clipping it are constituted, conductor patterns 4a-4f are formed on said insulating substrate, various circuit components 5, 6, 7 are fitted among the conductor patterns to constitute the YIG high frequency device. A magnet to apply a DC magnetic field to the resonator 3a is fitted to a couple of the magnet ports 3b, 3c and a coil pattern of multi-layer wiring structure is formed at the outer peripheral of the resonator 3a instead and a DC current flows thereto to form a DC magnetic field. Since the YIG resonance section and a conductor wiring section are integrated into a circuit, the device is miniaturized and mass- production is attained. |
