An apparatus for manufacturing a compound-semiconductor single crystal by the liquid encapsulated czochraiski (LEC) process.

摘要

A compound-semiconductor single-crystal-manufacturing apparatus comprises a crucible (20) for holding a molten raw material of GaAs (81) and a liquid capsule element of B203 (82), a holder (30) for said crucible (20); a heat element (50) concentrically surrounding the crucible (20), and a heat-shielding unit (60) surrounding the heat element (50), thereby manufacturing a GaAs single crystal (84) by progressively pulling it up from the molten raw material (81) held in the crucible (20) by the liquid encapsulated czochralski (LEC) process, and wherein the heat-shielding unit (60) and crucible holder (30) are formed by molding a sintered aluminum nitride (A1N) element.