| 摘要 |
PURPOSE:To attain miniaturization and the prevention of a crosstalk by forming a photosensor to the extracting section of either of a source or a drain in a selective transistor. CONSTITUTION:A channel region 3 is shaped to a gate region 1 formed onto a substrate through a gate insulating film 2, a light-shielding insulating film is deposited, and windows are bored to source-drain window sections. A metallic electrode 4 is brought into ohmic-contact with one of the channel 3 and a trans parent electrode 5 is brought into Schottky-contact with the other. The transpar ent electrode 5 is attached on the side driven as a photosensor in source-drain at that time, and offset gate structure is shaped so that the gate 1 and the electrode 5 are not superposed. Accordingly, miniaturization, fining and noise- resisting properties can be improved without changing fundamental structure when the extracting port of either of the source-drain in a selective transistor is used as the photosensor. |
