| 摘要 |
PURPOSE:To make the isolating interval small, by providing an insulating layer comprising a material having oxidation resisting property in a part of a boundary between an Si region and the region of a porous Si oxide film, and eliminating the difference in pattern conversion in a thin Si film region before and after thermal oxidation. CONSTITUTION:A thermal oxide film SiO2 2 is formed on a P type Si substrate 1. As a material having oxidation resistance property, a CVD Si3N4 film 5 is deposited on the film 3. With SiO2 films 6 and 7, which are formed by separating the film 5, and resist 4 as masks, the film 2, the film 3 and the substrate 1 are etched. The films 6 and 7, the film 2 and the film 3 are removed. A CVD Si3N4 8 is deposited thereon. Then porous Si9 is formed on the upper surface of the substrate. An Si single crystal region 11 is isolated from the substrate 1 by the porous Si. |
