发明名称 Mask structure for x-ray lithography and method for making same.
摘要 <p>A mask substrate (32) for use in X-ray transparent member (10) which is stretched over a fixture to a predetermined tension and then adhered to a borosilicate glass ring (16). In accordance with a preferred embodiment, the composite member includes a film (12) of polyborane which has been grown in compression, onto which a polymide (14) is coated. The polyborane film is grown on a silicon wafer, coated with the polyimide, after which the central area of the wafer is etched away. The borasilicate glass is adhered to the polyimide side of the composite, leaving the tensioned polyborane surface open for the application of an X-ray absorptive pattern (36) thereto to define a complete mask structure (38) suitable for use in X-ray lithography.</p>
申请公布号 EP0164820(A2) 申请公布日期 1985.12.18
申请号 EP19850301634 申请日期 1985.03.08
申请人 EATON CORPORATION 发明人 BRORS, DANIEL LEONARD;WILLIAMS, BOB JOE
分类号 G03F1/22;H01L21/027;(IPC1-7):G03F1/00 主分类号 G03F1/22
代理机构 代理人
主权项
地址