| 摘要 |
PURPOSE:To further refine microstructure without reducing punch-through withstanding voltages by a method wherein a gate insulating film is etched, with a resist film retained on a previously-processed gate electrode and on its sides acting as a mask, and source, drain layers are provided by self-alignment. CONSTITUTION:A resist 5 is applied on a resist 4 retained after being used for the formation of an electrode 3. The resists 4, 5 are removed by etching, except a portion of the resist 5 located on the sides of the electrode 3. The electrode 3 and the retained resist 5 work as a mask and an insulating film 2 is subjected to etching, which results in the gate insulating film 2 wider than the electrode 3. Next, impurities are diffused, for the formation of a source 6, drain 7. In a device designed as such, the distance between a drain and source is larger than the width of the gate electrode 3. It follows therefore that withstand voltages may be maintained and patterns further refined in the presence of lateral diffusion of impurities. |
