发明名称 |
Process of making dual well CMOS semiconductor structure with aligned field-dopings using single masking step |
摘要 |
A process for making a CMOS dual-well semiconductor structure with field isolation doping, wherein only a single lithographic masking step is required for providing self-alignment both of the wells to each other and also of the field isolation doping regions to the wells. The lithographic masking step forms a well mask and defines an oxidation barrier which acts as: an implant mask (absorber) during the ion-implantation of a field dopant of one type; an oxidation barrier over one well during the oxidation of the opposite-type well to form over the one well a sacrificial oxide layer which forms the alignment marks for subsequent formation of the field-doping regions; and a dopant-transmitter during the ion-implantation of an opposite-type field dopant which is simultaneously absorbed by the sacrificial oxide. As a result, there are formed field-doped oxide layers self-aligned to the wells so that, with a subsequent masking step, oxide field isolations are defined over the doped oxide layers. A heat cycle is then used to drive the field dopants into the corresponding field-doping regions.
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申请公布号 |
US4558508(A) |
申请公布日期 |
1985.12.17 |
申请号 |
US19840660673 |
申请日期 |
1984.10.15 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
KINNEY, WAYNE I.;KOBURGER, III, CHARLES W.;LASKY, JEROME B.;NESBIT, LARRY A.;TROUTMAN, RONALD R.;WHITE, FRANCIS R. |
分类号 |
H01L27/08;H01L21/033;H01L21/76;H01L21/762;H01L21/8238;H01L27/092;H01L29/06;(IPC1-7):H01L21/22;H01L21/265;H01L29/78 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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