| 摘要 |
PURPOSE:To obtain a semiconductor device having flat surface of oxide film by executing dry etching after eliminating perfectly the alumina layer at the aluminum surface by the wet etching. CONSTITUTION:Aluminum 9 is vacuum deposited on an oxide film 7 formed on a silicon substrate 6 and an aperture 8 thereof and an alumina layer 10 is formed on aluminum 9 by natural oxidation or anode oxidation. Moreover, the alumina layer 10 is coated with the resist 11 only at the required area as the electrode of semiconductor device. The section of the alumina layer 10, where is not coated with resist 11 is eliminated by the wet etching utilizing acetic acid and ammonium fluoride. In this case, since the alumina layer 10 is perfectly removed, the surface of aluminum 9 can also be removed in such a thickness as 1,000-2,000Angstrom by the wet etching using organic alkali system or phosphoric acid. Moreover, aluminum 9 at the area not coated with resist 11 is removed by dry etching utilizing reactive ion etching and the resist 11 is finally removed. |
