| 摘要 |
PURPOSE:To obtain satisfactory resolution, by forming an active layer comprising a low impurity-concentration HgCdTe layer, which is separated by a thick channel stopping layer of high impurity-concentration HgCdTe, on a temporary substrate comprising CdTe, thereafter dissolving and removing only the temporary substrate, and making the channel stopping layer sufficiently thick. CONSTITUTION:On a CdTe substrate 1 (temporary substrate), an N<+>-HgCdTe layer 2 including indium of about 5X10<16>cm<-3> is formed to a thickness of about 5mum. Etching is performed in the shape of a lattice 2'. An N<->-HgCdTe layer 3 (active layer) is formed to a thickness of about 10-20mum. Then an N<+>-HgCdTe layer 4 (recombination layer) is formed to a thickness of about 50mum. A sapphire plate 5 (true substrate) is bonded. A mixed liquid, which includes fluoric acid, nitric acid, acetic acid and water in a volume ratio of 2-5: 3-5:6:6, is used as an etchant, and only the CdTe substrate is dissolved and removed. A silicon dioxide layer 6 is formed on the active layer 3 to a thickness of about seveal mum. Another electrode 8 is formed on the recombination layer 4. |
