| 摘要 |
PURPOSE:To increase the resistance to electromigration by a method wherein an aluminum wiring of a multilayer film is made of the lower layer of aluminum and the upper layer of aluminum doped with copper. CONSTITUTION:An insulation film 202 is formed on a semiconductor substrate 201, and an electrode contact is bored at a required position on the film 202. Thereafter, the lower layer metallic film 203 of aluminum of 300Angstrom thick is first adhered by sputtering; successively, the upper layer metallic film 204 of aluminum of 10,000Angstrom thick containing 1-4wt% of copper is adhered. Next, patterning is carried out with photo resist, and both of the aluminum films are shaped by using this pattern as a mask. |
