发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 PURPOSE:To improve the output dielectric strength at the time of an output voltage H by constituting a diode between the base and emitter, and base and collector of a transistor (TR) which constitutes the rear stage of a Darlington circuit and generates the output voltage. CONSTITUTION:A schottky barrier diode (SBD)17 is connected through a resistance 16 between the base and emitter of the TR4 which constituted the rear stage of the Darlington circuit together with a TR3 and connected at its emitter to an output terminal 1, and an SBD18 is connected between the base and collector. When the output voltage at the terminal 1 is at H, the base charge of the TR4 is discharged through the SBD17 and a TR2, so the current consumption is rediced. Further, the TR4 operates a Shottky clamping TR because of the SBD18, so the output dielectric strength at the time of the output voltage H is improved.
申请公布号 JPS60254823(A) 申请公布日期 1985.12.16
申请号 JP19840112491 申请日期 1984.05.30
申请人 MITSUBISHI DENKI KK 发明人 TAKI YOUICHIROU
分类号 H03K19/018;H03K17/04;H03K17/60;H03K19/003 主分类号 H03K19/018
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