| 摘要 |
PURPOSE:To increase a frequency range which satisfies the oscillation conditions by connecting a source electrode of the 2nd dual gate FET to the 1st gate of the 1st dual gate FET to form a resistance feedback circuit and adding terminals through which the signals to be frequency divided with different phases are supplied. CONSTITUTION:A reverse-phase signal emerges at a drain electrode 12 in case a forward-phase signal emerges at the 1st gate electrode 14 of the 1st dual gate FET11. At the same time, a reverse-phase signal is also produced at a source electrode 22 of the 2nd dual a gate FET21 and then fed back to the electrode 14. Then a feedback circuit has oscillations as long as the gain of this circuit is larger than 1. The oscillation is possible up to about 6GHz with use ofa GaAs dual gate FET having its gate length set at about 1.0-0.5mum. Thus the oscillation is possible up to a range between a low frequency and 6GHz or so with use of the GaAs dual gate FET. Therefore the division is possible with this feedback circuit over an octave f=6GHz-12GHz when the mixing is carried out by means of gate terminals 16 and 25. |
